ROHM’s New SiC Schottky Barrier Diodes for High-Voltage xEV Systems: Featuring a Unique Package Design for Improved Insulation Resistance
Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) — ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by increasing